2024.04.24
6406
The N6 SiC power module is a 1200V half-bridge SiC MOSFET power module with on-resistance of 2.9mΩ, 2.2mΩ, 1.8mΩ, etc., to meet the high power density requirements of automotive systems.The module is a half-bridge circuit, and the internal design of multiple SiC chips is designed in parallel, and the chip current sharing is ensured by the series gate resistor.The module adopts a low-inductance, high-efficiency heat dissipation package design, and the stray inductance of the module power loop is less than 6.5nH.The module adopts epoxy injection molding packaging process, pinfin water cooling heat dissipation substrate directly water cooling, and AMB heat dissipation insulation substrate with high thermal conductivity and high reliability inside the module.The SiC chip adopts double-sided silver paste sintering and copper wire bonding connection, which gives priority to increasing the service life of the module, and the module has passed the 175°C AQG-324 reliability certification, and can work in the 175°C junction temperature environment for a long time.
